Materials Science Program Seminar
Gallium Nitride Based Light Emitting Diodes (LEDs) and Laser Diodes for Energy Efficient Lighting
Event Details
Date
Thursday, May 8, 2014
Time
4-5 p.m.
Location
Description
Prof. Steven P. DenBaars, Materials Dept., UCSB. InGaN based materials have been used to fabricate LEDs fabricated from gallium nitride materials have lead to the realization of high-efficiency white solid-state lighting. Using advanced light extraction structures we have fabricated advanced GaN white LEDs structures which exhibit luminous efficacy greater than 150 lm/Watt, and external quantum efficiencies higher than 60% at low current densities(20A/cm2) on c-plane.
Cost
Free
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